Surface-plasmon-enhanced light emitters based on InGaN quantum wells

By K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, Axel Scherer. Nature Materials, 2004

1,389 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/84501941b59db27330d6b0f287b9c92ee902e1ec

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In Biomedical Engineering

1. S. A. Maier
2. Nelson Tansu
3. Guangyu Liu
4. Harry A. Atwater
5. Hongping Zhao
6. A. P. Alivisatos
7. L. Sweatlock
8. J. Lakowicz

In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. Jing Zhang
5. Y. Ee
6. Xiao-Hang Li
7. H. Tong
8. R. Arif

In Materials Chemistry

1. Nelson Tansu
2. Hongping Zhao
3. A. P. Alivisatos
4. Harry A. Atwater
5. A. I. Zhmakin

Citations in the corpus

• III-Nitride Photonics (2010, background): “The coupling of the surface plasmon mode to the InGaN QW active region leads to an increase in density of states and to a Purcell enhancement factor, which in turn leads to significant increase in radiative recombination rate and radiative efficiency of the InGaN QW LEDs [46], [47].”
• Silicon-Based Plasmonics for On-Chip Photonics (2010, background): “been demonstrated along single metallic films [5], [60] and near nanoparticles [52] and nanowires [3].”
• Surface plasmon enhanced light emission from CdSe quantum dot nanocrystals (2006, background): “[1] We have directly measured significant enhancement of internal quantum efficiency of emission due to spontaneous recombination rate increases.”
• Photonic crystal LEDs – designing light extraction (2009, background): “The coupling of the emitter (quantum wells) with the SP forms the surface plasmon polariton (SPP [69]).”