Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency

By Guan-Bo Lin, David S. Meyaard, Jaehee Cho, E. Fred Schubert, H. Shim, C. Sone. 2012

151 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1d84efd1f13cc94301dd97cd9579aa19cdc7251f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Nelson Tansu
2. Hongping Zhao
3. Jing Zhang
4. Guangyu Liu
5. R. Arif

In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. R. Arif
5. Jing Zhang
6. Y. Ee

In Electrical and Electronic Engineering

1. Hongping Zhao
2. R. Arif
3. Nelson Tansu
4. Jing Zhang
5. Guangyu Liu

Citations in the corpus

• Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, result): “The non-unity injection efficiency at high current density of InGaN-GaN QW LEDs has also been confirmed by some recent works [21]–[23], [39].”