Design and characterization of GaN∕InGaN solar cells
By O. Jani, I. Ferguson, C. Honsberg, Sarah Kurtz. 2007
574 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/d39059c8d96baa4bae9806db972c6e8a00b7089f
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In Atomic and Molecular Physics, and Optics
In Biomedical Engineering
In Condensed Matter Physics
Citations in the corpus
- InGaN Solar Cells: Present State of the Art and Important Challenges (2012, background): “an absorption layer or multiquantum-well (MQW)/superlattice (SL) structure is sandwiched by p- and n-GaN layers [43]–[62].”
- A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures (2009, unknown): “51P, for >3J multijunction stacking [37–40].”
- III-Nitride Photonics (2010, background): “High-efficiency multijunction tandem solar cells of InGaN/InN material have the potential to compete with the traditional III–V tandem cells [73]–[75].”
- Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios (2011, background): “In addition to various applications for lasers [1]–[7], thermoelectric [8]–[11], photovoltaics and solar energy conversion [12]–[14], and terahertz photonics [15], III-nitride compound semiconductors are of great importance for light-emitting diodes (LEDs) employed in solid-state lighting [16]–[30].”