Negative capacitance in a ferroelectric capacitor.

By Asif Islam Khan, K. Chatterjee, Brian Wang, S. Drapcho, L. You, C. Serrao, S. Bakaul, Ramamoorthy Ramesh, Sayeef Salahuddin. Nature Materials, 2014

705 citations recorded by the source corpus.

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/72a6a0ac2af70dde4dfb9ccd6059bf98f3c6e5c4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Changhwan Shin
2. Jaesung Jo
3. Asif Islam Khan
4. Chenming Calvin Hu
5. Ramamoorthy Ramesh
6. Sayeef Salahuddin
7. Juan Pablo Duarte

In Materials Chemistry

1. Changhwan Shin
2. Jaesung Jo
3. Sayeef Salahuddin
4. Ramamoorthy Ramesh

Citations in the corpus

• Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor (2016, background): “Recently, negative capacitance phenomena have been experimentally verified in variety of systems: isolated ferroelectric films [2], ferroelectric-dielectric bilayers [3], [4] and superlattices [5].”
• Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching (2016, methodology): “As discussed in previous studies [3], [5], the direct measurement of negative capaci-”
• Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics (2016, neutral): “1) isolated ferroelectric films [3]; 2) ferroelectric-dielectric”