Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

By Asif Islam Khan, K. Chatterjee, Juan Pablo Duarte, Zhongyuan Lu, A. Sachid, Sourabh Khandelwal, Ramamoorthy Ramesh, Chenming Calvin Hu, Sayeef Salahuddin. IEEE Electron Device Letters, 2016

202 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/762c889704da731d92ace8fa69e45bc66ddd897e

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In Electrical and Electronic Engineering

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Citations in the corpus

• Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching (2016, methodology): “The strong VD-dependency of the hysteretic behavior is observed for the first time, and the improved SS characteristics is confirmed by comparing with the previous works [6], [10], [19] (Table I).”