Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation

By Asif Islam Khan, C. Yeung, Chenming Calvin Hu, Sayeef Salahuddin. International Electron Devices Meeting, 2011

317 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4dd3b2a437e9fa420657e1a4f053395d8b9dc0cf

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Asif Islam Khan
2. Chenming Calvin Hu
3. Sayeef Salahuddin
4. Supriyo Datta
5. Cheng-I Lin
6. Mark S. Lundstrom
7. H. Philip Wong
8. Eric Pop

In Materials Chemistry

1. Sayeef Salahuddin
2. Supriyo Datta

Citations in the corpus

• Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors (2016, methodology): “If the gate stack has a metal in between the FE and the dielectric [13], an additional capacitor CC O N2 may be used (Fig.”
• Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor (2016, unknown): “[11], where the ferroelectric was modeled as a capacitor with “S”-shaped charge (Q)-voltage (VF E ) characteristics.”
• Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics (2016, methodology): “Simulation studies of NCFETs have also been reported in [2] and [10]–[13].”
• Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics (2015, methodology): “BTO (BaTiO3) and PZT (PbZrTiO3) were used for demonstrating a steep slope MOSFET and TFET [5]–[8].”