Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

By M. H. Lee, Y.-T Wei, K. Chu, J.-J. Huang, C.-W Chen, C. Cheng, M. Chen, H.Y. Lee, Y. Chen, Li-heng Lee and 1 more. IEEE Electron Device Letters, 2015

136 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a9f403783630bcd901362624dfcb1d2eeebc4889

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Changhwan Shin
2. Jaesung Jo
3. Asif Islam Khan
4. Chenming Calvin Hu
5. Cheng-I Lin
6. Sayeef Salahuddin

In Materials Chemistry

1. Changhwan Shin
2. Jaesung Jo
3. Sayeef Salahuddin

Citations in the corpus

• Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics (2016, background): “bilayers [4], [5]; and 3) superlattices [6] and ferroelectricgated transistors [7]–[9].”
• Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching (2016, result): “The strong VD-dependency of the hysteretic behavior is observed for the first time, and the improved SS characteristics is confirmed by comparing with the previous works [6], [10], [19] (Table I).”
• Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor (2016, unknown): “2501319 long channel MOSFETs [6]–[10].”