Satyabrata Jit

Electrical and Electronic Engineering · 2016–2017

A researcher in the Science corpus: 2 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Satyabrata Jit trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Adrian M. Ionescu (in Electrical and Electronic Engineering)
  2. K. Boucart (in Electrical and Electronic Engineering)

Papers from Satyabrata Jit's perspective

Ordered by how strongly the researchers Satyabrata Jit trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric (IEEE Transactions on Electron Devices)
  2. Tunnel field-effect transistor without gate-drain overlap
  3. A new definition of threshold voltage in Tunnel FETs
  4. Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope (2008 IEEE International Electron Devices Meeting)
  5. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (IEEE Electron Device Letters)
  6. Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering (IEEE Transactions on Electron Devices)
  7. Complementary tunneling transistor for low power application
  8. Tunnel field-effect transistors as energy-efficient electronic switches (Nature)
  9. Tunnel Field Effect Transistor With Raised Germanium Source (IEEE Electron Device Letters)
  10. Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

Their papers