A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- $k$ Stacked Gate-Oxide Structure

By Sanjay Kumar, Ekta Goel, Kunal Singh, Balraj Singh, Mirgender Kumar, Satyabrata Jit. IEEE Transactions on Electron Devices, 2016

141 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/12afdd9fc4b9102ed04eda530211f7ce2c6e097e

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In Electrical and Electronic Engineering

1. Sanjay Kumar
2. Satyabrata Jit
3. Balraj Singh
4. Kunal Singh
5. Ekta Goel

Citations in the corpus

• 2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure (2017, methodology): “The drain current can be expressed as [10]”