Tunnel Field Effect Transistor With Raised Germanium Source

By Sung Hwan Kim, S. Agarwal, Z. Jacobson, P. Matheu, Chenming Calvin Hu, Tsu-Jae King Liu. IEEE Electron Device Letters, 2010

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A 2-D Analytical Model for Double-Gate Tunnel FETs (2014, methodology): “The operation principle of the TFETs relies on the band-to-band tunneling (BTBT) of electrons, so that they are able to operate as steeper switches at lower supply voltages [6].”
Design of U-Shape Channel Tunnel FETs With SiGe Source Regions (2014, methodology): “59 × 106) are modified for Ge mole fraction x = 1 according to experiment data [10], [11].”
Performance Enhancement of Novel InAs/Si Hetero Double-Gate Tunnel FET Using Gaussian Doping (2016, methodology): “In order to combine the high tunneling efficiency of narrow bandgap material TFETs and the high mobility of III–”
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure (2017, background): “, use of low bandgap materials such as Ge and SiGe in source/drain with Si as channel) [7], [8], strain channel engineering (i.”