Philipp Hehenberger

Electrical and Electronic Engineering · 2009–2011

A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Philipp Hehenberger trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Ben Kaczer (in Electrical and Electronic Engineering)

Papers from Philipp Hehenberger's perspective

Ordered by how strongly the researchers Philipp Hehenberger trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  2. Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  3. Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
  4. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)
  5. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)
  6. A two-stage model for negative bias temperature instability (IEEE International Reliability Physics Symposium)
  7. Two independent components modeling for Negative Bias Temperature Instability (IEEE International Reliability Physics Symposium)
  8. Universal recovery behavior of negative bias temperature instability [PMOSFETs] (IEEE International Electron Devices Meeting 2003)
  9. NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs] (IEEE International Electron Devices Meeting 2003)
  10. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)

Their papers