Steep-slope tunnel field-effect transistors using III–V nanowire/Si heterojunction

By K. Tomioka, M. Yoshimura, T. Fukui. Symposium on VLSI Technology, 2012

155 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/85c3beb9b50124d6074822fc40f36d6348fc77c1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Kaustav Banerjee
2. Deblina Sarkar
3. Lars-Erik Wernersson
4. Claes Thelander
5. Pulickel M. Ajayan
6. Alan C. Seabaugh
7. Wei David Liu
8. Hong Li

In Electrical and Electronic Engineering

1. Wei David Liu
2. Kaustav Banerjee
3. Jiahao Kang
4. Alan C. Seabaugh
5. Deblina Sarkar
6. Wei Cao
7. Y. Gong
8. Lars-Erik Wernersson

Citations in the corpus

• A subthermionic tunnel field-effect transistor with an atomically thin channel (2015, methodology): “The only experimental TFET so far reported in the literature to have obtained this metric was produced by Tomioka et al.(28), who used a 1D (nanowire) based structure.”
• Tunnel Field-Effect Transistors: State-of-the-Art (2014, background): “and InAs nanowire [33], [34] improves the current.”
• High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors (2013, background): “Recent reports on devices with SS below 60 mV/decade [3]–[5], however, have shown that the devices suffer from low ON-current levels.”