Single-electron transistors in heterostructure nanowires.

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SEMICONDUCTOR NANOWIRES AND NANOTUBES (2004, methodology): “This study complements the steps taken toward nanowirebased quantum electronics by Samuelson and coworkers with their demonstration of a resonant tunneling diode (153) and a single electron transistor (154) using individual MBE-grown heterostructure nanowires at temperatures below 12 K.”
Nanowires With Promise for Photovoltaics (2011, methodology): “FET (NW-FET) structures were fabricated using standard procedures in a back-gated geometry [ 74 ].”
Nanowire Transistor Performance Limits and Applications (2008, background): “have led to the demonstration of single-electron transistors [68] and optical barcodes [11], [37].”
ZnO nanorods: synthesis, characterization and applications (2005, methodology): “Recently three groups—Lieber et al [80, 81], Yang et al [82] and Samuelson et al [83–85]—reported the synthesis of nanowire superlattice structures exploiting the general concept of metalcatalysed nanowire growth.”
Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires (2007, methodology): “(2) In the image processing, the strain is calculated using one reference configuration obtained from the extrapolated reference lattice.”
Transport phenomena in nanofluidics (2008, background): “De Franceschi et al., 2003; Thelander et al., 2003; Bjork et al., 2004; Zhong et al., 2005".”