Electron transport in InAs nanowires and heterostructure nanowire devices
By Claes Thelander, M. Björk, M. Larsson, A. Hansen, L. Wallenberg, Lars Samuelson. 2004
139 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/7371548cf9ec4100fcd63c0f08724ce3bbe502e6
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
- Magnus Borgström
- Lars Samuelson
- J. Wallentin
- Wei Dang Lu
- Ping Xie
- M. Björk
- Claes Thelander
- Charles M. Lieber
In Electrical and Electronic Engineering
- Magnus Borgström
- Lars Samuelson
- Wei Dang Lu
- J. Wallentin
- Ping Xie
- M. Björk
- Claes Thelander
- Charles M. Lieber
Citations in the corpus
- A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy (2016, background): “Four-point probe measurements are frequently employed to provide measurements of nanowire resistivity, from which the charge carrier density can be inferred [31, 32].”
- Sulfur passivation for ohmic contact formation to InAs nanowires (2007, methodology): “Previous measurements on InAs nanowires [6, 14] have shown that ohmic contacts do not function as non-invasive probes in a 4-probe configuration.”
- Doping of semiconductor nanowires (2011, background): “showed that for InAs NW-FETs with lowresistance contacts the inner probes are invasive [126].”
- Nanowire Transistor Performance Limits and Applications (2008, background): “devices including single-electron transistors and quantum dots in CBE grown InAs/InP nanowire axial heterostructures in which the InP layers serve as tunnel barriers [40].”