Vertical GAAFETs for the Ultimate CMOS Scaling
By D. Yakimets, G. Eneman, P. Schuddinck, T. H. Bao, Marie Garcia Bardon, P. Raghavan, A. Veloso, N. Collaert, A. Mercha, D. Verkest and 2 more. IEEE Transactions on Electron Devices, 2015
160 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/a5dfbee404e8cb669e17a032f55bf3816b7402bf
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In Electrical and Electronic Engineering
Citations in the corpus
- Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node (2017, background): “The impact of scattering can be considered by introducing the ballistic ratio (BR) which means the ballistic current contribution to the total output current and given as a function of LG primarily [17]”