Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions

By Marie Garcia Bardon, H. P. Neves, Robert Puers, C. Hoof. IEEE Transactions on Electron Devices, 2010

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Comparative Performance Analysis of the Dielectrically Modulated Full- Gate and Short-Gate Tunnel FET-Based Biosensors (2015, background): “The tunnel FETs (TFETs) are emerging as the potential substitute for several gate engineered MOSFETs due to its superior performance in terms of speed, power dissipation, and subthreshold swing [17]–[20].”
A 2-D Analytical Model for Double-Gate Tunnel FETs (2014, background): “Many 2-D studies on TFET modeling analytically calculate the tunneling generation rate using 2-D electric field, but the tunneling current is computed by numerically integrating over the volume of the device [10]–[13].”
A Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity Analysis (2012, background): “The 2-D Poisson equation (1) (neglecting the mobile charges [17]) is solved in five regions, viz.”
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure (2017, background): “following boundary conditions [25]: ψ0 = ψ1(0, y) = −VT ln(N1/ni ) (7) ψ1 = ψ1(L1, y) = ψ2(L1, y) (8) ψ2 = ψ2(L1 + L2, y) = ψ3(L1 + L2, y) (9) ψ3 = ψ3(L1 + L2 + L3, y) = ψ4(L1 + L2 + L3, y) (10) ψ4 = ψ4(L1 + L2 + L3 + L4, y) = VT ln(N3/ni )+ VDS”