H. P. Neves

Electrical and Electronic Engineering · 2010

A researcher in the Science corpus: 1 paper; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom H. P. Neves trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. K. Boucart
  2. Adrian M. Ionescu

Papers from H. P. Neves's perspective

Ordered by how strongly the researchers H. P. Neves trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Band-to-band tunneling in carbon nanotube field-effect transistors. (Physical Review Letters)
  2. Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric (IEEE Transactions on Electron Devices)
  3. Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
  4. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (IEEE Electron Device Letters)
  5. A new definition of threshold voltage in Tunnel FETs
  6. Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
  7. Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer
  8. International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －
  9. Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics (IEEE Transactions on Electron Devices)
  10. High-κ gate dielectrics: Current status and materials properties considerations

Their papers