Benjamin Iñíguez
Electrical and Electronic Engineering · 2007–2011
A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 11 citations into it
Whom Benjamin Iñíguez trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Benjamin Iñíguez's perspective
Ordered by how strongly the researchers Benjamin Iñíguez trusts endorse each paper. Same corpus, a different order for every researcher.
- Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs
- Modeling of nanoscale gate-all-around MOSFETs (IEEE Electron Device Letters)
- Explicit continuous model for long-channel undoped surrounding gate MOSFETs (IEEE Transactions on Electron Devices)
- Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
- A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs
- A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism
- Junctionless multigate field-effect transistor
- Nanowire transistors without junctions. (Nature Nanotechnology)
- A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs
- Multiple-gate SOI MOSFETs