Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

By J. Sallese, N. Chevillon, C. Lallement, Benjamin Iñíguez, F. Prégaldiny. IEEE Transactions on Electron Devices, 2011

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A Full-Range Drain Current Model for Double-Gate Junctionless Transistors (2011, methodology): “These expressions have not been shown by the hybrid model proposed in the previous report [7].”
A Dual-Material Gate Junctionless Transistor With High- $k$ Spacer for Enhanced Analog Performance (2014, unknown): “The operation of DGJLT is explained in [16] and [17].”
A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETs (2012, background): “Several references in the literature have reported the analytical model for JL double-gate MOSFETs [7]–[10] and JL surroundinggate MOSFETs [11]–[13], all of which only focus on analyzing the long-channel characteristics and cannot predict the shortchannel behavior when the devices are pushed into a ”