Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs

By H. A. Hamid, Benjamin Iñíguez, Jaume Roig Guitart. IEEE Transactions on Electron Devices, 2007

157 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6a4cbe490bbf7d56aca707d3a048ac8ca753faf8

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In Electrical and Electronic Engineering

1. Bo Yu
2. Yuan Taur
3. Kaushik Roy
4. Jae-Joon Kim

Citations in the corpus

• Scaling of Nanowire Transistors (2008, background): “Another approach [22], [23] does not assume the parabolic potential profile but still uses 1-D Poisson’s equation in the insulator region.”