A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism

By J. Sallese, F. Krummenacher, F. Prégaldiny, C. Lallement, A. Roy, Christian C. Enz. 2005

176 citations recorded by the source corpus.

We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and charges that in turn lead to very simple relationships among the physical quantities. Finally, we emphasize on the link that exists between this approach and the EKV formalism derived for bulk MOSFETs, which in turn leads to the unique gms/ID design methodology for DG architectures. © 2004 Elsevier Ltd. All rights reserved.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/84a579d2da94163ec39a5f779f960bf74a785a9a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Eric A. Vittoz
2. Benjamin Iñíguez
3. Christian C. Enz

Citations in the corpus

• Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design (2006, background): “) More recently, the research of the EKV team is more oriented toward the modeling of multigate MOS devices and more particularly on double-gate devices [64, 65].”
• Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors (2011, methodology): “In order to estimate whether we can rely on a chargebased model for undoped DG MOSFETs [7] or on the related equivalent-silicon-thickness concept valid in its doped version [8], we propose to estimate the limit of the validity of such an approach when applied to junctionless DG MOSFETs.”