Explicit continuous model for long-channel undoped surrounding gate MOSFETs

By B. Iñíguez, David Jiménez, J. Roig, H. A. Hamid, L. Marsal, J. Pallarès. IEEE Transactions on Electron Devices, 2005

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Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors (2010, methodology): “For the sake of simplicity, a double-gate (DG) geometry was assumed, although the model can be extended to a single-gate or surrounding-gate geometry [4]–[6].”
Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs (2007, methodology): “The solution for the 1-D potential term φ0(r) is given by [5], [19], [20]”
Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs (2007, methodology): “7 and 8. Although [ 10 ] did not provide transconductance and transcapacitance models, we can straightforwardly transform the Q in [10] into the α in [12] and use the expressions in [12] to calculate transconductance and transcapacitance.”