Kun-hyuk Kang

IEEE Electron Device Letters · 2005

A researcher in the Science corpus: 1 paper; trusts 0 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Who trusts Kun-hyuk Kang overall

  1. Sanjay V. Kumar

Papers from Kun-hyuk Kang's perspective

Ordered by how strongly the researchers Kun-hyuk Kang trusts endorse each paper. Same corpus, a different order for every researcher.

  1. A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
  2. NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs] (IEEE International Electron Devices Meeting 2003)
  3. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
  4. Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling (IEEE Electron Device Letters)
  5. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)
  6. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  7. Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors
  8. Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  9. A two-stage model for negative bias temperature instability (IEEE International Reliability Physics Symposium)
  10. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)

Their papers