Seungwu Han

Atomic and Molecular Physics, and Optics · 2003–2021

A researcher in the Science corpus: 11 papers; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

• Atomic and Molecular Physics, and Optics — 6 citations into it

Whom Seungwu Han trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Byeong-Joo Lee
2. J. Perdew

Who trusts Seungwu Han overall

1. L. Ventelon

Papers from Seungwu Han's perspective

Ordered by how strongly the researchers Seungwu Han trusts endorse each paper. Same corpus, a different order for every researcher.

1. The missing memristor found (Nature)
2. Overview of candidate device technologies for storage-class memory (IBM Journal of Research and Development)
3. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. (Nano letters (Print))
4. Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications (IEEE Electron Device Letters)
5. Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices
6. Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
7. Generalized Gradient Approximation Made Simple.
8. Nanoionics-based resistive switching memories. (Nature Materials)
9. The melting lines of model systems calculated from coexistence simulations
10. Second nearest-neighbor modified embedded atom method potentials for bcc transition metals

Their papers

• Development of an interatomic potential for phosphorus impurities in α-iron (2004) — 615 citations
• Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (2010) — 1,966 citations
• Best practices in machine learning for chemistry (2021) — 384 citations
• First-principles study of point defects in rutileTiO2−x (2006) — 184 citations
• Wafer-scale transferable molybdenum disulfide thin-film catalysts for photoelectrochemical hydrogen production (2016) — 140 citations
• Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations (2015) — 220 citations
• Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory (2010) — 218 citations
• First-principles study on doping and phase stability of HfO2 (2008) — 248 citations
• Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors (2008) — 294 citations
• Magnetic ordering at the edges of graphitic fragments: Magnetic tail interactions between the edge-localized states (2005) — 424 citations
• Development of new interatomic potentials appropriate for crystalline and liquid iron (2003) — 1,241 citations