Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

By Y. Yang, F. Pan, Qi Liu, Ming Liu, Fei Zeng. Nano letters (Print), 2009

828 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4535ae57d08633b1d8013e1bc9b07377f3f657d3

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Keum Do Kim
2. C. S. Hwang
3. Zhaoping Liu
4. D. Kwon
5. Xufeng Zhou
6. Daniele Ielmini

In Materials Chemistry

1. Keum Do Kim
2. C. S. Hwang
3. Daniele Ielmini

Citations in the corpus

• Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (2010, background): “Several materials also show both types of switching behaviour”
• Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices (2011, neutral): “dependence for the OFF-state was reported in [66] and [67] and is totally consistent with the one measured for the soft breakdown current in ultrathin SiO2 layers [61].”
• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “A large variety of solid-state materials have been found to exhibit the RS effect, including solid electrolytes [5], complex perovskite oxides [1,6–10], binary oxides [11–18], organic materials [19], amorphous silicon [20], and amorphous carbon [21,22].”