Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices
By K. Fujiwara, Takumi Nemoto, M. Rozenberg, Yoshinobu Nakamura, H. Takagi. 2008
141 citations recorded by the source corpus.
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect.
Subfields: Electrical and Electronic Engineering, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/c7c5d033d4918152ba96b70eeb548f506d74e370
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In Electrical and Electronic Engineering
In Polymers and Plastics
Citations in the corpus
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (2010, background): “However, basic information about the conducting filaments, such as their composition, size and density, has been inferred only indirectl”
- Nonvolatile resistive switching in graphene oxide thin films (2009, background): “(Kinoshita et al., 2006; Do et al., 2008; Chang et al., 2008; Fujiwara et al., 2008; Oligschlaeger et al., 2006), have already been reported to be in need of Forming process.”