Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations

By Kanghoon Yim, You Yong, Joohee Lee, Kyuhyun Lee, H. Nahm, Jiho Yoo, Chanhee Lee, C. S. Hwang, Seungwu Han. 2015

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Novel high-κ dielectric materials are identified by automated ab initio calculations on ~1800 oxides. The cubic BeO is found to possess an unprecedented material property of 10 eV for band gap and 275 for dielectric constant. Candidate high-κ oxides are suggested for microelectronic devices such as CPU, DRAM and flash memory.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/06bef8a1ce1c993ec74059507732731c7425ae53