M. Fuhrer
Materials Chemistry · 2000–2020
A researcher in the Science corpus: 22 papers; trusts 21 researchers and is trusted by 33 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 385 citations into it; #751 of 11,513 by trust here, #475 by citations
- Atomic and Molecular Physics, and Optics — 187 citations into it; #1,345 of 7,135 by trust here, #190 by citations
- Electrical and Electronic Engineering — 145 citations into it; #9,900 of 16,539 by trust here, #3,735 by citations
- Biomedical Engineering — 59 citations into it; #3,093 of 10,734 by trust here, #1,051 by citations
Whom M. Fuhrer trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- K. Novoselov
- Iroon Polytechniou
- E. Hwang
- A.K. Geim
- E. McCann
- Francisco Guinea
- T. Ando
- S. Morozov
- Yuanbo Zhang
- S. Adam
Who trusts M. Fuhrer overall
- S. Adam
- Phaedon Avouris
- N. M. R. Peres
- T. Dürkop
- E. Hwang
- Yu-ming Lin
- Jianhao Chen
- A. Naeemi
- Joerg Appenzeller
- Hong Li
Papers from M. Fuhrer's perspective
Ordered by how strongly the researchers M. Fuhrer trusts endorse each paper. Same corpus, a different order for every researcher.
- Electronic properties of disordered two-dimensional carbon
- Influence of cultivation temperature on the ligninolytic activity of selected fungal strains
- Intrinsic and extrinsic performance limits of graphene devices on SiO2. (Nature Nanotechnology)
- Atomic structure of graphene on SiO2. (Nano letters (Print))
- Detection of individual gas molecules adsorbed on graphene. (Nature Materials)
- Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene (Nature)
- Observation of the fractional quantum Hall effect in graphene (Nature)
- Substrate-limited electron dynamics in graphene
- Logic Circuits with Carbon Nanotube Transistors (Science)
- Carbon nanotubes as schottky barrier transistors. (Physical Review Letters)
Their papers
- Atomic structure of graphene on SiO2. (2007) — 1,448 citations
- Intrinsic and extrinsic performance limits of graphene devices on SiO2. (2007) — 2,898 citations
- Gate-tunable graphene spin valve (2007) — 227 citations
- Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides (2007) — 543 citations
- Charged Impurity Scattering in Graphene (2007) — 1,313 citations
- Single-walled carbon nanotube electronics (2002) — 1,186 citations
- Graphene: Materially Better Carbon (2010) — 217 citations
- High-Mobility Nanotube Transistor Memory (2002) — 467 citations
- Extraordinary Mobility in Semiconducting Carbon Nanotubes (2004) — 1,454 citations
- Charge transport and inhomogeneity near the minimum conductivity point in graphene (2007) — 147 citations
- Crossed nanotube junctions (2000) — 1,057 citations
- Rotational actuators based on carbon nanotubes (2003) — 1,053 citations
- Properties and applications of high-mobility semiconducting nanotubes (2004) — 139 citations
- High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects (2012) — 745 citations
- Anisotropic Etching of Atomically Thin MoS2 (2013) — 204 citations
- Flexible two-dimensional indium tin oxide fabricated using a liquid metal printing technique (2020) — 241 citations
- Long range intrinsic ferromagnetism in two dimensional materials and dissipationless future technologies (2018) — 132 citations
- Two dimensional and layered transition metal oxides (2016) — 438 citations
- Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 (2011) — 342 citations
- Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition (2010) — 171 citations