Charge transport and inhomogeneity near the minimum conductivity point in graphene
By Sungjae Cho, M. Fuhrer. 2007
147 citations recorded by the source corpus.
The magnetic-field-dependent longitudinal and Hall components of the resistivity ${\ensuremath{\rho}}_{\mathrm{xx}}(H)$ and ${\ensuremath{\rho}}_{\mathrm{xy}}(H)$ are measured in graphene on silicon dioxide substrates at temperatures $1.6\phantom{\rule{0.3em}{0ex}}\mathrm{K}\ensuremath{\le}T\ensuremath{\le}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. At charge densities near the minimum conductivity point ${\ensuremath{\rho}}_{\mathrm{xx}}(H)$ is strongly enhanced and ${\ensuremath{\rho}}_{\mathrm{xy}}(H)$ is suppressed, indicating nearly equal electron and hole contributions to the current. The data are inconsistent with the standard two-fluid model but consistent with the prediction for inhomogeneously distributed electron and hole regions of equal mobility. At low $T$ and high $H$, ${\ensuremath{\rho}}_{\mathrm{xx}}(H)$ saturates to a value $\ensuremath{\sim}h∕{e}^{2}$, with Hall conductivity $\ensuremath{\ll}{e}^{2}∕h$, which may indicate a regime of localized $v=2$ and $v=\ensuremath{-}2$ quantum Hall puddles.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/6996c0f4f261dd3ae0c61ca09d05f001a8e377af
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In Atomic and Molecular Physics, and Optics
In Materials Chemistry
Citations in the corpus
- Electronic transport in two-dimensional graphene (2010, methodology): “An indirect confirmation of the existence of electronhole puddles in exfoliated graphene close to the CNP came from the measurement of the magnetic fielddependent longitudinal and Hall components of the resistivity ρxx(H) and ρxy(H) (Cho and Fuhrer, 2008).”
- Charged Impurity Scattering in Graphene (2007, background): “On K-doping, (1) the mobility decreases, (2) σ(Vg) becomes more linear, (3) the mobility asymmetry for holes versus electrons increases, (4) the gate voltage of minimum conductivity Vg,min shifts to more negative gate voltage, (5) the width of the minimum conductivity region in Vg broadens and (6) t”