Substrate-limited electron dynamics in graphene

By Simone Fratini, Francisco Guinea. 2007

397 citations recorded by the source corpus.

We study the effects of polarizable substrates such as $\mathrm{Si}{\mathrm{O}}_{2}$ and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening due to the long-range interaction with the polar modes at the interface between graphene and the substrate. This mechanism results in a density dependent electrical resistivity, which exhibits a sharp increase around room temperature, where it can become the dominant limiting factor of electron transport. The effects are weaker in doped bilayer graphene due to the more conventional parabolic band dispersion. Amorphous substrates, such as polymethyl methacrylate, can induce a room temperature resistivity of comparable magnitude, although with a weaker temperature dependence.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1227156fe7139cb82e23a5babd3366a74aa11a17

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. A. Di Bartolomeo
2. E. Rossi
3. E. Hwang
4. S. Adam
5. N. M. R. Peres
6. Filippo Giubileo
7. M. Fuhrer
8. Jianhao Chen

In Electrical and Electronic Engineering

1. E. Hwang
2. E. Rossi
3. Eric Pop
4. A. Di Bartolomeo
5. S. Adam
6. Filippo Giubileo
7. A. Young
8. Debdeep Jena

In Materials Chemistry

1. A. Di Bartolomeo
2. E. Rossi
3. S. Adam
4. E. Hwang
5. N. M. R. Peres
6. Filippo Giubileo
7. K. Novoselov
8. M. Fuhrer

Citations in the corpus

• Energy dissipation and transport in nanoscale devices (2010, result): “A similar result has also been predicted for graphene on insulators like SiO2 or HfO2 [121], and has been well-known in silicon inversion layers with high-K dielectrics [55, 122].”
• Charge Scattering and Mobility in Atomically Thin Semiconductors (2013, background): “The frequency of the SO phonon ωSO is [17,36]”
• Current saturation in zero-bandgap, top-gated graphene field-effect transistors. (2008, background): “Note that this value is close to the 55 meV surface phonon energy of SiO 2 (refs&nbs”
• Intrinsic and extrinsic performance limits of graphene devices on SiO2. (2007, background): “rtional to q-1 where q is the scattering wavevector, and the resistivity is proportional to kF -1 ∝ V g -1/2. However, finite-q corrections to |Hkk’| 2 lead to a stronger dependence of ρ B(Vg,T) on Vg[12], so the observed ρB(Vg,T) ∝ Vg -1.04 is also reasonable. RIP scattering11, 12 by the polar opti”
• Electronic transport in two-dimensional graphene (2010, background): “The remote interface polar optical phonons in the substrate (i.e. SiO2) have recently been considered (Chen et al., 2008b; Fratini and Guinea, 2008).”
• The role of contact resistance in graphene field-effect devices (2017, background): “5 ∙ 10(4)cm(2)Vs is always reported [51, 52], while for epitaxial graphene (or chemical vapor deposited graphene) on SiC substrate the upper limit is 10(4)cm(2)Vs.”