High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

By Wenzhong Bao, Xinghan Cai, Dohun Kim, K. Sridhara, M. Fuhrer. 2012

745 citations recorded by the source corpus.

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30–60 cm2/Vs, relatively independent of thickness (15–90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ∼50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d3d250e732e97f6367e87a0fbb01b4abddc478af

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In Biomedical Engineering

  1. A. Castellanos-Gómez
  2. Herre S. J. van der Zant
  3. Filippo Giubileo
  4. G. Steele
  5. Giuseppe Luongo
  6. L. Iemmo
  7. M. Buscema
  8. Tobias Foller

In Materials Chemistry

  1. A. Castellanos-Gómez
  2. G. Steele
  3. Herre S. J. van der Zant
  4. M. Buscema
  5. Filippo Giubileo
  6. Giuseppe Luongo
  7. L. Iemmo
  8. Gwan‐Hyoung Lee

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