Gate-tunable graphene spin valve
By Sungjae Cho, Yung-fu Chen, M. Fuhrer. 2007
227 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b037525487e7a6ea0a332805d2dc1f91dca74253
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
- N. M. R. Peres
- K. Novoselov
- A. Di Bartolomeo
- E. Hwang
- A.K. Geim
- Francisco Guinea
- A. C. Castro Neto
- E. Rossi
In Materials Chemistry
- N. M. R. Peres
- K. Novoselov
- E. Hwang
- E. Rossi
- Francisco Guinea
- S. Adam
- A. Di Bartolomeo
- A. C. Castro Neto
Citations in the corpus
- The electronic properties of graphene (2007, background): “The amazingtransport properties of graphene allow for their use ina plethora of appli ations ranging from single mole uledete tion (S hedin et al., 2007; Wehling et al., 2007)to spin inje tion (Cho et al., 2007; Hill et al., 2007;Ohishi et al., 2007; Tombros et al., 2007).”
- Electronic transport in two-dimensional graphene (2010, methodology): “We note that graphene can be used as a component of more complicated structures by exploiting its spin (Hill et al., 2006; Cho et al., 2007; Tombros et al., 2007; Han et al., 2009; Huertas-Hernando et al., 2006, 2009; Józsa et al., 2009) or valley (Rycerz et al.”
- Colloquium : Spintronics in graphene and other two-dimensional materials (2019, methodology): “This measurement configuration then became the standard method to characterize the distinct spin transport properties of graphene, as demonstrated by Cho et al. (2007) and Popinciuc et al. (2009) who modulated spin transport in graphene via the application of vertical electric fields.”
- Spintronics and pseudospintronics in graphene and topological insulators. (2012, unknown): “[27][28][29][30][31][32][33] found that the spin-diffusion length sd λ was indeed proportional to the”
- The role of contact resistance in graphene field-effect devices (2017, background): “Several attempts to realize graphene based spin-transistor as well as spin valves have been reported [193-200], but the measured values of spin lifetimes always resulted significantly smaller than the prediction.”