Atomic structure of graphene on SiO2.

By M. Ishigami, Jianhao Chen, W. Cullen, M. Fuhrer, E. Williams. Nano letters (Print), 2007

1,448 citations recorded by the source corpus.

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically clean graphene sheets.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/baf684865f6579be4c45bf360cbc348e8c0401e8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Measurement of the quantum capacitance of graphene. (2009, methodology): “Before measuring the capacitance, each device was cleaned and annealed at 200 °C in an argonshydrogen environmen”
High-throughput solution processing of large-scale graphene. (2009, background): “Moreover, this lithographic process can degrade device performance by introducing contaminants if the photoresist is not entirely remove”
Production, properties and potential of graphene (2010, methodology): “[63] Ishigami M, Chen JH, Cullen WG, Fuhrer MS, Williams ED.”
Giant phonon-induced conductance in scanning tunnelling spectroscopy of gate-tunable graphene (2008, background): “value over a 60×60 nm 2 area) are observed, probably due to roughness in the underlying SiO 2 (refs&nbs”
Observation of electron–hole puddles in graphene using a scanning single-electron transistor (2007, background): “These studies revealed, among other things, the atomic structure of graphene and structural corrugations that partially conform to the underlying silicon oxid”
Electronic transport in two-dimensional graphene (2010, background): “In Jang et al. (2008) graphene was placed on SiO2 and rs was reduced from 0.8 (no top dielectric layer) to 0.56 by placing ice in vacuum as a top dielectric layer.”