Charged Impurity Scattering in Graphene

By Jianhao Chen, C. Jang, S. Adam, M. Fuhrer, E. Williams, Masa Ishigami. 2007

1,313 citations recorded by the source corpus.

Valuable insight into the influence of scattering from impurities on the peculiar electronic properties of graphene are gained by a systematic study of how its conductivity changes with increasing concentration of potassium ions deposited on its surface.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d23baee8fc8c52e9235d86240e72f93eee18b393

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In Atomic and Molecular Physics, and Optics

In Biomedical Engineering

In Materials Chemistry

Citations in the corpus

Graphene Frequency Multipliers (2009, background): “[20] show that it is possible to engineer”
Experimental Review of Graphene (2011, background): “In these measurements, C ≈ 20 in (10) was obtained [34, 41].”
Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices (2014, background): “number of potassium atoms on a graphene layer [11], or”
Production, properties and potential of graphene (2010, background): “[142] Chen JH, Jang C, Adam S, Fuhrer MS, Williams ED, Ishigami M.”
Single-layer MoS2 phototransistors. (2012, background): “24 The reason is likely that the trap/impurity states exist at the SiO2 surface in the bottom gate FETs, and the scattering from these charged impurities degrades the device mobility.(24,32,33) Reduction of the surface traps/impurities in the bottom gate dielectric is expected to improve themobility”
Colloquium: The transport properties of graphene: An introduction (2010, methodology): “Note that since Λ(g) 6= Λ(−g) the computed conductivity has no electron-hole symmetry, an effect seen in the experiments (Chen et al., 2008).”