Sungjoo Lee
Electrical and Electronic Engineering · 2011–2016
A researcher in the Science corpus: 4 papers; trusts 4 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 37 citations into it
Whom Sungjoo Lee trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Kaustav Banerjee (in Electrical and Electronic Engineering)
- K. Boucart (in Electrical and Electronic Engineering)
- Adrian M. Ionescu (in Electrical and Electronic Engineering)
- Yasin Khatami (in Electrical and Electronic Engineering)
Papers from Sungjoo Lee's perspective
Ordered by how strongly the researchers Sungjoo Lee trusts endorse each paper. Same corpus, a different order for every researcher.
- Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric (IEEE Transactions on Electron Devices)
- Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering (IEEE Transactions on Electron Devices)
- Vertical Silicon-Nanowire Formation and Gate-All-Around MOSFET (IEEE Electron Device Letters)
- Si tunnel transistors with a novel silicided source and 46mV/dec swing (Symposium on VLSI Technology)
- Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon Nanowires (IEEE Electron Device Letters)
- Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible Tunnel FET performance (2008 IEEE International Electron Devices Meeting)
- Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits (IEEE Transactions on Electron Devices)
- Band-to-band tunneling in carbon nanotube field-effect transistors. (Physical Review Letters)
- Ultrahigh electron mobility in suspended graphene
- International Technology Roadmap for Semiconductors 2003の要求清浄度について - シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について -
Their papers
- MXene Electrode for the Integration of WSe2 and MoS2 Field Effect Transistors (2016) — 222 citations
- CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$-mV/decade Subthreshold Swing (2011) — 185 citations
- High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping (2015) — 275 citations
- Vertical Si-Nanowire $n$-Type Tunneling FETs With Low Subthreshold Swing ($\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature (2011) — 190 citations