Vertical Si-Nanowire $n$-Type Tunneling FETs With Low Subthreshold Swing ($\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature

By R. Gandhi, Zhixian Chen, N. Singh, Kaustav Banerjee, Sungjoo Lee. IEEE Electron Device Letters, 2011

190 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1f071ce9af8a23cadf741964c1aa6e179971e2e7