Enrique Miranda
Electrical and Electronic Engineering · Advanced Electronic Materials · 2010–2018
A researcher in the Science corpus: 6 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 83 citations into it
Whom Enrique Miranda trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Enrique Miranda's perspective
Ordered by how strongly the researchers Enrique Miranda trusts endorse each paper. Same corpus, a different order for every researcher.
- Continuous analytic I-V model for surrounding-gate MOSFETs (IEEE Electron Device Letters)
- Modeling of nanoscale gate-all-around MOSFETs (IEEE Electron Device Letters)
- Explicit continuous model for long-channel undoped surrounding gate MOSFETs (IEEE Transactions on Electron Devices)
- Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs (IEEE Electron Device Letters)
- Use of negative capacitance to provide voltage amplification for low power nanoscale devices. (Nano letters (Print))
- A Thin Film Approach to Engineering Functionality into Oxides
- A continuous, analytic drain-current model for DG MOSFETs
- Resistive switching in transition metal oxides
- Electrical observations of filamentary conductions for the resistive memory switching in NiO films
- The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
Their papers
- Recommended Methods to Study Resistive Switching Devices (2018) — 574 citations
- Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries (2012) — 172 citations
- Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (2017) — 285 citations
- Quantum-size effects in hafnium-oxide resistive switching (2013) — 140 citations
- Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors (2010) — 135 citations
- Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions (2010) — 173 citations