Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions
By Enrique Miranda, C. Walczyk, C. Wenger, T. Schroeder. IEEE Electron Device Letters, 2010
173 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/e9f3031876f07cd266ca2cc5747fa310476e8815
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
- D. Walczyk
- Thomas Schroeder
- T. Bertaud
- M. Sowinska
- M. Lukosius
- M. Fraschke
- D. Wolansky
- Bernd Tillack
Citations in the corpus
- Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices (2011, methodology): “The proposed QPC model can be consistently applied to explain the temperature dependence of the ON-state and OFFstate currents.”