Nanoscale Transistors: Device Physics, Modeling and Simulation

By Mark S. Lundstrom, Jing Guo. 2005

337 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/c6a730b19a757d1bca4423dd99c51bc8cd5abbb8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Youngki Yoon
2. Y. Ouyang
3. Jing Guo
4. Frank Schwierz
5. Leitao Liu
6. Phaedon Avouris
7. Joerg Appenzeller
8. Jie Deng

Citations in the corpus

• Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study (2007, background): “ultimate scaling limit as for Si MOSFETs [22].”