Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

By Shreepad Karmalkar, Umesh K. Mishra. 2001

445 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2cd3d3b57bb6db4ee5ebfede1128e37a150bf840

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Primit Parikh

In Electrical and Electronic Engineering

1. Primit Parikh

Citations in the corpus

• 30-W/mm GaN HEMTs by field plate optimization (2004, background): “structure, predicting up to 5 enhancement in breakdown voltages [7].”