C. D. Walle
Materials Chemistry · 2009–2019
A researcher in the Science corpus: 13 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 137 citations into it
- Condensed Matter Physics — 105 citations into it
Whom C. D. Walle trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- C. Walle (in Materials Chemistry)
- A. Janotti (in Materials Chemistry)
Papers from C. D. Walle's perspective
Ordered by how strongly the researchers C. D. Walle trusts endorse each paper. Same corpus, a different order for every researcher.
- Nitrogen-vacancy center in diamond: Model of the electronic structure and associated dynamics
- Optical properties of the nitrogen-vacancy singlet levels in diamond
- High‐dimensional posterior exploration of hydrologic models using multiple‐try DREAM(ZS) and high‐performance computing
- Anisotropic interactions of a single spin and dark-spin spectroscopy in diamond
- Properties of nitrogen-vacancy centers in diamond: the group theoretic approach
- The negatively charged nitrogen-vacancy centre in diamond: the electronic solution
- 13C hyperfine interactions in the nitrogen-vacancy centre in diamond
- Handbook of Nitride Semiconductors and Devices
- Spin dynamics in the optical cycle of single nitrogen-vacancy centres in diamond
- Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe
Their papers
- Effects of strain on band structure and effective masses in MoS$_2$ (2012) — 382 citations
- Measurement and Control of Single Nitrogen-Vacancy Center Spins above 600 K (2012) — 238 citations
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes (2013) — 346 citations
- Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes (2011) — 480 citations
- Auger recombination rates in nitrides from first principles (2009) — 362 citations
- Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes (2012) — 181 citations
- Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitride (2019) — 155 citations
- Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (2018) — 1,374 citations
- Native point defects and impurities in hexagonal boron nitride (2018) — 229 citations
- Tutorial: Defects in semiconductors—Combining experiment and theory (2016) — 378 citations
- First-principles theory of nonradiative carrier capture via multiphonon emission (2014) — 265 citations
- Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells (2012) — 175 citations
- Band bowing and band alignment in InGaN alloys (2010) — 341 citations