Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

By Zhuangzhuang Hu, Hong Zhou, Q. Feng, Jincheng Zhang, Chunfu Zhang, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, X. Kang and 1 more. IEEE Electron Device Letters, 2018

137 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/319ab63a337ea370c5c55ce07b7421dd5eba7285

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In Electronic, Optical and Magnetic Materials

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

In Materials Chemistry

1. Debdeep Jena
2. Lei Yuan
3. Yuming Zhang
4. Hongpeng Zhang
5. Xiaoyan Tang
6. Huili Grace Xing
7. Jichao Hu
8. Jianwu Sun

Citations in the corpus

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “[including schottky barrier diode (SBD) [12]–[16], field effect”
• Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ $R_{\text{on,sp}}$ of up to 0.95 GW/cm2 (2020, background): “Benchmark plot of state-of-the-art β-Ga2O3 SBDs, including lateral [5], [25], vertical [10]–[12], [17], [18], [26], [27] and trench SBDs [21], [14]–[16].”