Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

By Shimeng Yu, H. Philip Wong. IEEE Transactions on Electron Devices, 2011

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Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (2011, methodology): “Analytical models based on thermally activated filament growth were proposed for CBRAM [31], [32], similar to the bipolar metal–oxide RRAM model considered here.”
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling (2012, background): “in the direction of the electric field F by a factor αqV , where q is the elementary charge and α is a constant [10], [21], [22].”
Cation-based resistance change memory (2013, methodology): “As mentioned earlier in this review, the physical scalability of CBRAM cells has been demonstrated, with an early example of scaling to the sub-20 nm regime involving an Ag-doped GeSe2 electrolyte with Ag as the active electrode and a W plug as counter electrode [6].”
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, methodology): “ches to RRAM analytical modeling were also reported, including variable-gap switching [80], a mixed variable gap/ radius [81], and quantum point conductance [82, 83].”