Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories

By A. Ghetti, C. M. Compagnoni, A. Spinelli, A. Visconti. IEEE Transactions on Electron Devices, 2009

207 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/33711a21f1f34b8f436f32936398326a3ab99932

How researchers see this paper

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In Electrical and Electronic Engineering

1. Tibor Grasser
2. Hans Reisinger
3. Ben Kaczer
4. Souvik Mahapatra
5. Dieter K. Schroder
6. Thomas Aichinger

Citations in the corpus

• Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (2012, background): “Most RTN experiments and simulation models claim that gk is exponentially distributed [59,71,72], while a log-normal distribution has been suggested as well [73].”
• Origin of NBTI variability in deeply scaled pFETs (2010, methodology): “The exponential distribution of single-charge ΔVth can be understood if non-uniformities in the pFET channel due to random dopant fluctuations (RDF) are considered [ 13-15 ].”