Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air
By K. Hoshikawa, E. Ohba, Takumi Kobayashi, J. Yanagisawa, Chihiro Miyagawa, Y. Nakamura. 2016
284 citations recorded by the source corpus.
Abstract A new approach to β-Ga 2 O 3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the β-Ga 2 O 3 melting temperature and investigating the effects of crucible composition and shape. β-Ga 2 O 3 single crystals 25 mm in diameter were grown in platinum–rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/603d8407aad89e0516a3fa2f5fc3dabd440f604a
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “It is worth noting that only β-Ga2O3 could be grown by melt growth technologies because the melting point of β-Ga2O3 was about 1793 °C [32], which leads to the rapid development of β-Ga2O3.”
- Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications (2020, methodology): “the corrosion of the iridium crucible by melting β-Ga2O3 [72, 73].”