InAs–Si Nanowire Heterojunction Tunnel FETs

By K. Moselund, H. Schmid, C. Bessire, Mikael T. Björk, H. Ghoneim, Heike Riel. IEEE Electron Device Letters, 2012

133 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/600fa8bba627d4db683740cb338f3f4d37eef555

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In Biomedical Engineering

1. Lars-Erik Wernersson
2. Claes Thelander

In Electrical and Electronic Engineering

1. Lars-Erik Wernersson
2. Claes Thelander

Citations in the corpus

• High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors (2013, background): “neling through a barrier at a given limited probability, the ONcurrent is invariably lower than for a corresponding MOSFET device [7], [8].”