Trapping effects and microwave power performance in AlGaN/GaN HEMTs

By S. Binari, K. Ikossi, J. Roussos, W. Kruppa, Doewon Park, H. Dietrich, D. Koleske, A. Wickenden, R. Henry. 2001

639 citations recorded by the source corpus.

The dc small-signal, and microwave power output characteristics of AlGaN/GaN HEMTs are presented. A maximum drain current greater than 1 A/mm and a gate-drain breakdown voltage over 80 V have been attained. For a 0.4 /spl mu/m gate length, an f/sub T/ of 30 GHz and an f/sub max/ of 70 GHz have been demonstrated. Trapping effects, attributed to surface and buffer layers, and their relationship to microwave power performance are discussed. It is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer. Through a reduction of these trapping effects, a CW power density of 3.3 W/mm and a pulsed power density of 6.7 W/mm have been achieved at 3.8 GHz.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/286527876e51209dd5cddb58db4b17fc58df0d69

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In Condensed Matter Physics

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Citations in the corpus

Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination (2003, background): “Various theories have been proposed to explain such a reduction in output power density (commonly called current collapse or current slump) based on buffer layer electron trapping [ 9 ], vertical gate field [10], and surface state electron trapping [6], [7].”
GaN-Based RF Power Devices and Amplifiers (2008, background): “It is believed to be a traprelated phenomenon where both surface and bulk traps contribute [36], [ 37 ].”
Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (2007, background): “As expected, the dielectric properties of the layer do not appreciably change our results and conclusions, which certainly depend on the trap parameters considered.”
Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method (2002, neutral): “We note that trapped charge may deplete the HEMT channel for a subsequent Isat traces [13].”
A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC (2004, background): “As the AlGaN–GaN material system is still in the development stage, current slump, related to surface and buffer interface traps, has been observed under high drain bias RF drive in GaN HEMTs [12], [ 13 ].”
Trapping effects in GaN and SiC microwave FETs (2002, methodology): “Further studies [6], [34] confirmed the”
A study on current collapse in AlGaN/GaN HEMTs induced by bias stress (2003, background): “As a cause of the collapse, gate bias-induced nonuniform strain [6], charging up of a second virtual gate [7], and hot electron injection and trapping in the buffer [ 8 ] are proposed.”