D. Garetto

Electrical and Electronic Engineering · 2010

A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom D. Garetto trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Stefan K. Lai
  2. Daniele Ielmini

Papers from D. Garetto's perspective

Ordered by how strongly the researchers D. Garetto trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories (IEEE Transactions on Electron Devices)
  2. Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation (2007 IEEE International Electron Devices Meeting)
  3. OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications (International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224))
  4. Storage-class memory: The next storage system technology (IBM Journal of Research and Development)
  5. Scaling analysis of phase-change memory technology (IEEE International Electron Devices Meeting 2003)
  6. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials (IEEE Transactions on Electron Devices)
  7. Current status of the phase change memory and its future (IEEE International Electron Devices Meeting 2003)
  8. Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology (International Electron Devices Meeting)
  9. Phase-change random access memory: A scalable technology (IBM Journal of Research and Development)
  10. Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

Their papers