Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology
By Jae-joon Oh, Joon-Min Park, Yong Lim, H. Lim, Y. Oh, Jung Shik Kim, J. M. Shin, Y. Song, K. Ryoo, D. Lim and 12 more. International Electron Devices Meeting, 2006
145 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/cc9351989cf98099c31a98c09159b1d9a4eba47a
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In Electrical and Electronic Engineering
- Daniele Ielmini
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Citations in the corpus
- NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory (2012, background): “2) Cross-Point Cell: Cross-point cell corresponds to the 1-diode-1-resistor (1D1R) [7], [10], [31]–[33] or 0-transistor1-resistor (0T1R) [13], [17], [18] structures used by several high-density NVM chips recently.”
- Recent Progress in Phase-Change Memory Technology (2016, background): “For these reasons, most large scale demonstrations have used PVD-deposited phase-change materials [18], [20], [23]–[25].”
- A durable and energy efficient main memory using phase change memory technology (2009, background): “Lastly, the diode-based cell has been reported to be more vulnerable to errors induced by writing data to adjacent cells because of bipolar turn-on of the nearest-neighbor cells [21].”
- Phase Change Memory (2008, background): “The specific access device used will also influence the achievable cell size; typically, for a given footprint a singlecrystalline Si diode can deliver more current than a tri-gate field effect transistor (FET) [5].”
- Phase change memory technology (2010, methodology): “In addition to developing an optimized etch chemistry for patterning the GST/TE stack, Oh et al[43] used a line-type GST layout (as opposed to an island-type GST layout) thereby maximizing the size of the patterned GST region and thus reducing the effect of RIE damage on the GST switching volume.”
- Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, background): “These devices include VO2 [75], epi- and poly-Si diodes [87,53], a p-CuOx/n-ZnOx diode [58] or an Ag/ZnO Schottky diode [88].”