Fei Hui

Electrical and Electronic Engineering · Nature Electronics · 2016–2020

A researcher in the Science corpus: 8 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Fei Hui trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Daniele Ielmini
  2. Rainer Waser
  3. Andrea C. Ferrari

Papers from Fei Hui's perspective

Ordered by how strongly the researchers Fei Hui trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications
  2. Fundamentals Of Modern Vlsi Devices
  3. The rise of graphene. (Nature Materials)
  4. Electric Field Effect in Atomically Thin Carbon Films (Science)
  5. Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  6. Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
  7. Low current resistive switching in Cu–SiO2 cells
  8. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM (2008 IEEE International Electron Devices Meeting)
  9. Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
  10. Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V (2007 IEEE International Electron Devices Meeting)

Their papers